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PSMN7R0-60YS Datasheet(PDF) 9 Page - NXP Semiconductors |
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PSMN7R0-60YS Datasheet(HTML) 9 Page - NXP Semiconductors |
9 / 15 page PSMN7R0-60YS_2 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 — 30 March 2010 9 of 15 NXP Semiconductors PSMN7R0-60YS N-channel LFPAK 60 V 6.4 m Ω standard level MOSFET Fig 13. Drain-source on-state resistance as a function of drain current; typical values Fig 14. Gate charge waveform definitions Fig 15. Gate-source voltage as a function of gate charge; typical values Fig 16. Drain-source on-state resistance as a function of drain current; typical values 003aae061 4 5 6 7 8 9 10 0 2040 6080 100 ID(A) RDSon (m Ω) VGS(V) = 5 6.5 6 8 10 5.5 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) 003aae063 0 2 4 6 8 10 020 40 60 QG (nC) VGS (V) VDS= 30V 48V 12V 003a a e 060 10 2 10 3 10 4 10 -1 1 10 10 2 VDS(V) C (pF) Cis s Crs s Cos s |
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