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SSM6N42FE Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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SSM6N42FE Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page SSM6N42FE 2009-10-13 4 Q1, Q2 Common Vth – Ta Ambient temperature Ta (°C) −50 50 150 0 100 0 1.0 0.5 Common Source ID = 1 mA VDS = 3 V IDR – VDS Drain–source voltage VDS (V) 10 10000 1 100 1000 0 −1.5 −0.5 −1 Common Source VGS = 0 V G D S IDR 25°C Ta = 100°C −25°C t – ID Drain current ID (mA) 1 10 100 1000 1 5 10 500 1000 10000 10000 tf tr ton toff Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25°C 50 100 5000 Total Gate Charge Qg (nC) Dynamic Input Characteristic 0 0 2 4 8 10 6 2 1 4 VDD = 10 V VDD = 16 V 3 Common Source ID = 0.8 A Ta = 25°C ⎪Yfs⎪ – ID Drain current ID (mA) 1 10 1000 10000 0.01 0.03 0.05 0.1 0.3 0.5 1 3 5 Common Source VDS = 3 V Ta = 25°C 10 100 Drain–source voltage VDS (V) C – VDS 100 1000 1 50 500 1 10 100 5 50 0.5 0.1 Common Source VGS = 0 V f = 1 MHz Ta = 25°C Coss Crss Ciss 10 5 |
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