SSM6N42FE datasheet(4/6 Pages) TOSHIBA

Part #	SSM6N42FE

Description	Field-Effect Transistor Silicon N-Channel MOS Type

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

SSM6N42FE

2009-10-13

4

Q1, Q2 Common

Vth – Ta

Ambient temperature Ta (°C)

−50

50

150

0

100

0

1.0

0.5

Common Source

ID = 1 mA

VDS = 3 V

IDR – VDS

Drain–source voltage VDS (V)

10

10000

1

100

1000

0

−1.5

−0.5

−1

Common Source

VGS = 0 V

G

D

S

IDR

25°C

Ta = 100°C

−25°C

t – ID

Drain current ID (mA)

1

10

100

1000

1

5

10

500

1000

10000

tf

tr

ton

toff

Common Source

VDD = 10 V

VGS = 0 to 2.5 V

Ta = 25°C

50

100

5000

Total Gate Charge Qg (nC)

Dynamic Input Characteristic

0

2

4

8

10

6

2

1

4

VDD = 10 V

VDD = 16 V

3

Common Source

ID = 0.8 A

Ta = 25°C

⎪Yfs⎪ – ID

Drain current ID (mA)

1

10

1000

10000

0.01

0.03

0.05

0.1

0.3

0.5

1

3

5

Common Source

VDS = 3 V

Ta = 25°C

10

100

Drain–source voltage VDS (V)

C – VDS

100

1000

1

50

500

1

10

100

5

50

0.5

0.1

Common Source

VGS = 0 V

f = 1 MHz

Ta = 25°C

Coss

Crss

Ciss

10

5

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