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SSM6N35FE Datasheet(PDF) 1 Page - Toshiba Semiconductor |
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SSM6N35FE Datasheet(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page SSM6N35FE 2008-03-10 1 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N35FE ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • N-ch 2-in-1 • Low ON-resistance: Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V DC ID 180 Drain current Pulse IDP 360 mA Drain power dissipation PD(Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) Marking Equivalent Circuit (top view) Unit: mm 6 1.2±0.05 1.6±0.05 1 2 3 5 4 JEDEC - JEITA - TOSHIBA 2-2N1A Weight: 3.0 mg (typ.) ES6 K Z 6 5 4 1 2 3 Q1 Q2 65 4 12 3 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 |
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