SSM6N35FE

2008-03-10

1

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

SSM6N35FE

○

High-Speed Switching Applications

○

Analog Switch Applications

• 1.2-V drive

• N-ch 2-in-1

Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)

Characteristics

Symbol

Rating

Unit

Drain–source voltage

20

V

Gate–source voltage

±10

V

DC

180

Drain current

Pulse

360

mA

Drain power dissipation

150

mW

Channel temperature

150

°C

Storage temperature

−55 to 150

°C

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease

in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Note 1: Total rating

Mounted on an FR4 board

(25.4 mm

Marking

Unit: mm

6

1.2±0.05

1.6±0.05

1

2

3

5

4

JEDEC

-

JEITA

-

TOSHIBA

2-2N1A

Weight: 3.0 mg (typ.)

ES6

K Z

6

5

4

1

2

3

Q1

Q2

65

4

12

3

1.Source1

2.Gate1

3.Drain2

4.Source2

5.Gate2

6.Drain1