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PMEM4020ND Datasheet(PDF) 6 Page - NXP Semiconductors |
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PMEM4020ND Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 11 page 2003 Nov 10 6 NXP Semiconductors Product data sheet NPN transistor/Schottky-diode module PMEM4020ND GRAPHICAL DATA handbook, halfpage 500 0 (1) (3) VF (mV) IF (mA) 100 200 300 400 10 102 103 1 MLE230 (2) Fig.2 Forward current as a function of forward voltage; typical values. Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. handbook, halfpage 25 0 510 15 IR ( µA) 20 VR (V) 105 104 103 102 10 1 MHC312 (1) (2) (3) Fig.3 Reverse current as a function of reverse voltage; typical values. Schottky barrier diode. (1) Tamb = 125 °C. (2) Tamb = 85 °C. (3) Tamb = 25 °C. handbook, halfpage 05 Cd (pF) 10 20 80 60 20 0 40 15 VR (V) MHC313 Fig.4 Diode capacitance as a function of reverse voltage; typical values. Schottky barrier diode; f = 1 MHz; Tamb = 25 °C. handbook, halfpage 0 1000 200 400 600 800 MHC077 10−1 110 hFE IC (mA) 102 103 104 (1) (2) (3) Fig.5 DC current gain as a function of collector current; typical values. NPN transistor; VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. |
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