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PMEM4020APD Datasheet(PDF) 5 Page - NXP Semiconductors |
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PMEM4020APD Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 13 page  PMEM4020APD_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 31 August 2009 5 of 13 NXP Semiconductors PMEM4020APD PNP transistor/Schottky rectifier module 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02 Table 7. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit PNP transistor ICBO collector-base cut-off current VCB = −40 V; IE = 0 A - - −100 nA VCB = −40 V; IE = 0 A; Tj = 150 °C -- −50 µA ICEO collector-emitter cut-off current VCE = −30 V; IB = 0 A - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A - - −100 nA hFE DC current gain VCE = −5 V; IC = −1 mA 300 - - VCE = −5 V; IC = −100 mA 300 - - VCE = −5 V; IC = −500 mA 250 - 900 VCE = −5 V; IC = −1 A 160 - - VCE = −5 V; IC = −2 A [1] 50 - - VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −1 mA - - −120 mV IC = −500 mA; IB = −50 mA - - −145 mV IC = −1 A; IB = −100 mA - - −260 mV IC = −2 A; IB = −200 mA - - −530 mV RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA [1] - 180 280 m Ω VBEsat base-emitter saturation voltage IC = −1 A; IB = −100 mA [1] -- −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A [1] -- −1.0 V fT transition frequency VCE = −10 V; IC = −50 mA; f = 100 MHz 150 - - MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz --10 pF Schottky barrier rectifier VF continuous forward voltage see Figure 1 IF = 0.1 mA [1] - 95 130 mV IF = 1 mA [1] - 155 210 mV IF = 10 mA [1] - 220 270 mV IF = 100 mA [1] - 295 350 mV IF = 1000 mA [1] - 540 640 mV IR reverse current see Figure 2 VR = 10 V [1] -7 20 µA VR = 40 V [1] - 30 100 µA Cd diode capacitance VR = 1 V; f = 1 MHz; see Figure 3 - 4348pF |
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