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ZXM61P02F Datasheet(PDF) 4 Page - Zetex Semiconductors

Part No. ZXM61P02F
Description  20V P-CHANNEL ENHANCEMENT MODE MOSFET
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZXM61P02F Datasheet(HTML) 4 Page - Zetex Semiconductors

   
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ZXM61P02F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
-20
V
ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current
IDSS
-1
µA
VDS=-20V, VGS=0V
Gate-Body Leakage
IGSS
±100
nA
VGS=± 12V, VDS=0V
Gate-Source Threshold Voltage
VGS(th)
-0.7
V
ID=-250µA, VDS= VGS
Static Drain-Source On-State Resistance
(1)
RDS(on)
0.6
0.9
VGS=-4.5V, ID=-0.61A
VGS=-2.7V, ID=-0.31A
Forward Transconductance (3)
gfs
0.56
S
VDS=-10V,ID=-0.31A
DYNAMIC (3)
Input Capacitance
Ciss
150
pF
VDS=-15 V, VGS=0V,
f=1MHz
Output Capacitance
Coss
70
pF
Reverse Transfer Capacitance
Crss
30
pF
SWITCHING(2) (3)
Turn-On Delay Time
td(on)
2.9
ns
VDD=-10V, ID=-0.93A
RG=6.2Ω, RD=11Ω
(Refer to test circuit)
Rise Time
tr
6.7
ns
Turn-Off Delay Time
td(off)
11.2
ns
Fall Time
tf
10.1
ns
Total Gate Charge
Qg
3.5
nC
VDS=-16V,VGS=-4.5V,
ID=-0.61A
(Refer to test circuit)
Gate-Source Charge
Qgs
0.5
nC
Gate Drain Charge
Qgd
1.5
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
VSD
-0.95
V
Tj=25°C, IS=-0.61A,
VGS=0V
Reverse Recovery Time (3)
trr
14.9
ns
Tj=25°C, IF=-0.61A,
di/dt= 100A/
µs
Reverse Recovery Charge(3)
Qrr
5.6
nC
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999


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