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ZXM61P02F Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. ZXM61P02F
Description  20V P-CHANNEL ENHANCEMENT MODE MOSFET
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZXM61P02F Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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ZXM61P02F
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
RθJA
200
°C/W
Junction to Ambient (b)
RθJA
155
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
74
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate- Source Voltage
VGS
± 12
V
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)
(VGS=4.5V; TA=70°C)(b)
ID
-0.9
-0.7
A
Pulsed Drain Current (c)
IDM
-4.9
A
Continuous Source Current (Body Diode)(b)
IS
-0.9
A
Pulsed Source Current (Body Diode)(c)
ISM
-4.9
A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD
625
5
mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
PROVISIONAL ISSUE A - JULY 1999


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