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Si3452C-B01-GM Datasheet(PDF) 6 Page - Silicon Laboratories |
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Si3452C-B01-GM Datasheet(HTML) 6 Page - Silicon Laboratories |
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6 / 36 page  Si3452/3 6 Rev. 1.0 Table 4. Detection Specifications Description Symbol Test Conditions Min Typ Max Unit Detection current limit ILIM_DET Measured with DETn shorted to GND —3 5 mA Detection voltage, when RDET =25kΩ VDET1 VDET2 VDET3 — –10.0 — –4.0 –8.0 –4.0 –2.8 — –2.8 V Detection slew rate — — 0.1 V/ μs Detection probe duration TPROBE 10 — 30 ms Detection probe cycle time TDET —— 500 ms Minimum valid signature resistance RDET_MIN 15 — 19 k Maximum valid signature resistance RDET_MAX 26.5 — 33 k Resistance at which open circuit is declared ROPEN 100 — 400 k Resistance at which short circuit is declared RSHORT 150 — 400 Valid detect capacitance CDET_VALID —— 150 nF Invalid detect capacitance CDET_INVALD 10 — — μF Table 5. Classification Specifications Description Symbol Test Conditions Min Typ Max Unit Class event voltage VCLASS 0mA < IPort < 45 mA –20.5 — –15.5 V Mark event voltage VMARK 0mA < IPort < 5 mA –7 — –10 V Classification current limit ILIM_CLASS Measured with DETn shorted to GND 51 — 100 mA Classification current regions Class 0 Class 1 Class 2 Class 3 Class 4 Overcurrent 0 8 16 25 35 51 — — — — — — 5 13 21 31 45 — mA Classification delay TCLASS_DLY Time from end of valid detect cycle to classification begin —5— ms Classification event time TCLE Width of valid VCLASS probe for 1- Event or 2-Event classification 10 — 30 ms Mark event time TME Width of mark between classification events —8— ms |
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