PMD4003K datasheet(7/15 Pages) NXP

Part #	PMD4003K

Description	MOSFET driver

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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7 / 15 page

PMD4003K_1

Product data sheet

Rev. 01 — 3 November 2006

7 of 15

NXP Semiconductors

PMD4003K

MOSFET driver

7.

Characteristics

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

Table 7.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

NPN transistor

ICBO

collector-base cut-off

current

VCB =40V; IE = 0 A

-

100

nA

VCB =40V; IE =0A;

Tj = 150 °C

--50

µA

hFE

DC current gain

VCE =5V; IC = 1 mA

300

450

-

VCE =5V; IC = 200 mA

300

450

830

VCE =5V; IC = 500 mA

[1] 300

400

-

VCE =5V; IC =1A

[1] 200

340

-

VCE =5V; IC =2A

[1] 75

120

-

VCEsat

collector-emitter

saturation voltage

IC = 100 mA; IB = 5 mA

-

30

80

mV

IC = 500 mA; IB =50mA

[1] -

100

120

mV

IC = 1 A; IB = 100 mA

[1] -

180

230

mV

IC = 2 A; IB = 200 mA

[1] -

360

440

mV

VBEsat

base-emitter saturation

voltage

IC = 100 mA; IB = 5 mA

-

0.75

0.9

V

IC = 500 mA; IB =50mA

[1] -

0.9

1.1

V

IC = 1 A; IB = 100 mA

[1] -1

2

V

IC = 2 A; IB = 200 mA

[1] -

1.1

1.3

V

VBE

base-emitter voltage

VCE =5V; IC = 500 mA

[1] -

760

-

mV

Diode

VF

forward voltage

IF = −200 mA

[1] --

−1.1

V

Device

td

delay time

IC = 0.5 A; IB =25mA

-

5

-

ns

tr

rise time

-

27

-

ns

ton

turn-on time

-

32

-

ns

ts

storage time

-

1520

-

ns

tf

fall time

-

184

-

ns

toff

turn-off time

-

1704

-

ns

Device with optional capacitor C1

td

delay time

IC = 0.5 A; IB =25mA;

C1 = 2.2 nF

-2

-

ns

tr

rise time

-

2

-

ns

ton

turn-on time

-

4

-

ns

ts

storage time

-

150

-

ns

tf

fall time

-

154

-

ns

toff

turn-off time

-

304

-

ns

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