PMBT3946YPN datasheet(7/15 Pages) NXP

Part #	PMBT3946YPN

Description	40 V, 200 mA NPN/PNP general-purpose double transistor

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Manufacturer	NXP [NXP Semiconductors]

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7 / 15 page

PMBT3946YPN_1

Product data sheet

Rev. 01 — 12 May 2009

7 of 15

NXP Semiconductors

PMBT3946YPN

40 V, 200 mA NPN/PNP general-purpose double transistor

VCE =1V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 3.

TR1 (NPN): DC current gain as a function of

collector current; typical values

Fig 4.

TR1 (NPN): Collector current as a function of

collector-emitter voltage; typical values

VCE =1V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

IC/IB =10

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

Fig 5.

TR1 (NPN): Base-emitter voltage as a function

of collector current; typical values

Fig 6.

TR1 (NPN): Base-emitter saturation voltage as

a function of collector current; typical values

006aab115

200

400

600

hFE

0

IC (mA)

10−1

103

102

110

(1)

(2)

(3)

VCE (V)

010

8

46

2

006aab116

0.10

0.05

0.15

0.20

IC

(A)

0.0

IB (mA) = 5.0

4.5

3.5

3.0

2.5

2.0

1.5

1.0

0.5

4.0

006aab117

0.4

0.8

1.2

VBE

(V)

0

IC (mA)

10−1

103

102

110

(1)

(2)

(3)

006aab118

IC (mA)

10−1

103

102

110

0.5

0.9

1.3

VBEsat

(V)

0.1

(1)

(2)

(3)

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