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PMBD353 Datasheet(PDF) 3 Page - NXP Semiconductors |
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PMBD353 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 7 page 2001 Oct 15 3 NXP Semiconductors Product data sheet Schottky barrier double diode PMBD353 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp = 300 μs; δ = 0.02. THERMAL CHARACTERISTICS Note 1. Refer to SOT23 standard mounting conditions. SYMBOL PARAMETER CONDITIONS MAX. UNIT Per diode VF forward voltage see Fig.2 IF = 0.1 mA 350 mV IF = 1 mA 450 mV IF = 10 mA 600 mV IR reverse current VR = 3 V; note 1; see Fig.3 0.25 μA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.4 1 pF SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 500 K/W |
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