PHKD6N02LT

Dual N-channel TrenchMOS logic level FET

Rev. 04 — 27 April 2010

Product data sheet

1.

Product profile

1.1 General description

Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Suitable for logic level gate drive

sources

1.3 Applications

Battery chargers

DC-to-DC convertors

Notebook computers

Portable equipment

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

--20

V

drain current

conducting; see Figure 1;

see Figure 3

--10.9

A

total power

dissipation

--4.17

W

Static characteristics

drain-source on-state

resistance

-

25

35

m

Ω

Dynamic characteristics

gate-drain charge

-6

-nC