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PHU77NQ03T Datasheet(PDF) 6 Page - NXP Semiconductors |
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PHU77NQ03T Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page PHD_PHU77NQ03T_1 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 01 — 28 November 2006 6 of 13 NXP Semiconductors PHD/PHU77NQ03T N-channel TrenchMOS FET Tj =25 °CTj =25 °C Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 6. Drain-source on-state resistance as a function of drain current; typical values Tj =25 °C and 175 °C; VDS >ID × RDSon Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature 003aab285 0 20 40 60 80 0 0.2 0.4 0.6 0.8 1 VDS (V) ID (A) 5.2 4.8 5.6 4.4 7 4 3.8 8 6 VGS (V) = 10 003aab286 0 5 10 15 20 0 2040 6080 ID (A) RDSon (m Ω) 5.6 6 10 7 8 VGS (V) = 5.2 003aab287 0 20 40 60 80 024 68 VGS (V) ID (A) Tj = 150 °C 25 °C 03af18 0 0.5 1 1.5 2 -60 0 60 120 180 Tj (°C) a a R DSon R DSon 25 °C () ------------------------------ = |
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