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PESD5V0S2BT Datasheet(PDF) 4 Page - NXP Semiconductors |
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PESD5V0S2BT Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 12 page PESD5V0S2BT_3 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 03 — 9 February 2009 4 of 12 NXP Semiconductors PESD5V0S2BT Low capacitance bidirectional double ESD protection diode 6. Characteristics [1] Non-repetitive current pulse 8/20 µs exponential decay waveform. [2] Measured from pin 1 to 3 or pin 2 to 3. Table 8. Electrical characteristics Tamb =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse standoff voltage - - 5 V IRM reverse leakage current VRWM = 5 V - 5 100 nA VCL clamping voltage IPP =1A [1][2] --10 V IPP =12A [1][2] --14 V VBR breakdown voltage IR = 1 mA 5.5 - 9.5 V rdif differential resistance IR = 1 mA --50 Ω Cd diode capacitance f = 1 MHz; VR = 0 V - 3545pF Tamb =25 °C tp = 8/20 µs exponential decay waveform Fig 3. Peak pulse power dissipation as a function of pulse duration; typical values Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values 001aaa632 tp (µs) 1104 103 10 102 102 103 PPP (W) 10 Tj (°C) 0 200 150 50 100 001aaa633 0.4 0.8 1.2 PPP 0 PPP(25°C) |
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