PESD5V0S2BT_3

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 03 — 9 February 2009

4 of 12

NXP Semiconductors

PESD5V0S2BT

Low capacitance bidirectional double ESD protection diode

6.

Characteristics

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform.

[2]

Measured from pin 1 to 3 or pin 2 to 3.

Table 8.

Electrical characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

reverse standoff voltage

-

-

5

V

reverse leakage current

-

5

100

nA

clamping voltage

[1][2] --10

V

[1][2] --14

V

breakdown voltage

5.5

-

9.5

V

differential resistance

--50

Ω

diode capacitance

-

3545pF

Fig 3.

Peak pulse power dissipation as a function of

pulse duration; typical values

Fig 4.

Relative variation of peak pulse power as a

function of junction temperature; typical

values

001aaa632

10

(W)

10

0

200

150

50

100

001aaa633

0.4

0.8

1.2

0