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PUMD48 Datasheet(PDF) 6 Page - NXP Semiconductors |
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PUMD48 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page PEMD48_PUMD48_5 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 05 — 13 April 2010 6 of 12 NXP Semiconductors PEMD48; PUMD48 NPN/PNP resistor-equipped transistors VCE =5V (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −40 °C IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C Fig 1. TR1 (NPN): DC current gain as a function of collector current; typical values Fig 2. TR1 (NPN): Collector-emitter saturation voltage as a function of collector current; typical values VCE =0.3 V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C VCE =5V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 3. TR1 (NPN): On-state input voltage as a function of collector current; typical values Fig 4. TR1 (NPN): Off-state input voltage as a function of collector current; typical values 103 102 10 1 mhc007 10−1 1 (3) 10 IC (mA) hFE 102 (1) (2) 10−1 10−2 mhc006 10−1 1 (3) VCEsat (V) 10 IC (mA) 102 (2) (1) 102 10−1 10 1 mhc008 10−1 110 IC (mA) VI(on) (V) 102 (3) (2) (1) 10 1 10−1 mhc009 10−2 10−1 1 (1) IC (mA) VI(off) (V) 10 (2) (3) |
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