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PDTC143ZT Datasheet(PDF) 2 Page - NXP Semiconductors |
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PDTC143ZT Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 14 page 2004 Aug 16 2 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; R1 = 4.7 k Ω, R2 = 47 kΩ PDTC143Z series FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage − 50 V IO output current (DC) − 100 mA R1 bias resistor 4.7 − k Ω R2 bias resistor 47 − k Ω PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE PNP COMPLEMENT PHILIPS EIAJ PDTC143ZE SOT416 SC-75 38 PDTA143ZE PDTC143ZEF SOT490 SC-89 53 PDTA143ZEF PDTC143ZK SOT346 SC-59 18 PDTA143ZK PDTC143ZM SOT883 SC-101 E3 PDTA143ZM PDTC143ZS SOT54 (TO-92) SC-43 TC143Z PDTA143ZS PDTC143ZT SOT23 − *18(1) PDTA143ZT PDTC143ZU SOT323 SC-70 *54(1) PDTA143ZU |
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