PDTC123JU datasheet(5/14 Pages) NXP

Part #	PDTC123JU

Description	NPN resistor-equipped transistors; R1 = 2.2 k廓, R2 = 47 k廓

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 14 page

2004 Aug 13

5

NXP Semiconductors

Product data sheet

NPN resistor-equipped transistors;

R1 = 2.2 k

Ω, R2 = 47 kΩ

PDTC123J series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 50 V; IE = 0

−

100

nA

ICEO

collector-emitter cut-off current

VCE = 30 V; IB = 0

−

1

μA

VCE = 30 V; IB = 0; Tj = 150 °C

−

50

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0

−

180

μA

hFE

DC current gain

VCE = 5 V; IC = 10 mA

100

−

VCEsat

collector-emitter saturation voltage

IC = 5 mA; IB = 0.25 mA

−

100

mV

Vi(off)

input-off voltage

IC = 100 μA; VCE = 5 V

−

0.6

0.5

V

Vi(on)

input-on voltage

IC = 5 mA; VCE = 0.3 V

1.1

0.75

−

V

R1

input resistor

1.54

2.2

2.86

k

Ω

resistor ratio

17

21

26

Cc

collector capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

−

2.5

pF

R2

R1

--------

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