SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 – DECEMBER 1995

7

FEATURES

*

200 Volt V

DS

*R

PARTMARKING DETAIL – MU

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Drain-Source Voltage

V

DS

200

V

Continuous Drain Current at T

I

D

60

mA

Pulsed Drain Current

I

DM

1A

Gate-Source Voltage

V

GS

± 20

V

Power Dissipation at T

P

tot

330

mW

Operating and Storage Temperature Range

T

-55 to +150

°C

PARAMETER

SYMBOL MIN.

MAX.

UNIT CONDITIONS.

Drain-Source

Breakdown Voltage

BV

DSS

200

V

I

Gate-Source Threshold

Voltage

V

GS(th)

1.0

3.0

V

I

Gate-Body Leakage

I

GSS

100

nA

V

Zero Gate Voltage

Drain Current

I

DSS

10

50

µA

µA

V

V

On-State Drain Current(1)

I

D(on)

250

mA

V

Static Drain-Source On-State

Resistance (1)

R

DS(on)

25

Ω

V

Forward Transconductance(1)

(2)

g

fs

75

mS

V

Input Capacitance (2)

C

iss

45

pF

Common Source

Output Capacitance (2)

C

oss

18

pF

V

Reverse Transfer Capacitance

(2)

C

rss

5pF

Turn-On Delay Time (2)(3)

t

d(on)

5ns

V

I

Rise Time (2)(3)

t

r

7ns

Turn-Off Delay Time (2)(3)

t

d(off)

6ns

Fall Time (2)(3)

t

f

6ns

(1) Measured under pulsed conditions. Width=300

µs. Duty cycle ≤2% (2) Sample test.

(3) Switching times measured with 50

Ω source impedance and <5ns rise time on a pulse generator

ZVN3320F

D

G

S

SOT23

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