PDTB113ZT datasheet(4/10 Pages) NXP

Part #	PDTB113ZT

Description	PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 10 k廓

Download	10 Pages

Scroll/Zoom	100%

Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

Logo

4 / 10 page

PDTB113Z_SER_2

Product data sheet

Rev. 02 — 16 November 2009

4 of 10

NXP Semiconductors

PDTB113Z series

PNP 500 mA resistor-equipped transistors; R1 = 1 k

Ω, R2 = 10 kΩ

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance

from junction to

ambient

in free air

[1]

SOT346

-

500

K/W

SOT54

-

250

K/W

SOT23

-

500

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ

Max

Unit

ICBO

collector-base cut-off

current

VCB = −40 V; IE =0A

-

−100

nA

VCB = −50 V; IE =0A

-

−100

nA

ICEO

collector-emitter

cut-off current

VCE = −50 V; IB =0A

-

−0.5

μA

IEBO

emitter-base cut-off

current

VEB = −5V; IC =0A

-

−0.8

mA

hFE

DC current gain

VCE = −5V; IC = −50 mA

70

-

VCEsat

collector-emitter

saturation voltage

IC = −50 mA; IB = −2.5 mA

-

−0.3

mV

VI(off)

off-state input

voltage

VCE = −5V; IC = −100 μA

−0.3

−0.6

−1.0

V

VI(on)

on-state input

voltage

VCE = −0.3 V;

IC = −20 mA

−0.4

−0.8

−1.4

V

R1

bias resistor 1 (input)

0.7

1.0

1.3

k

Ω

R2/R1

bias resistor ratio

9

10

11

Cc

collector capacitance VCB = −10 V; IE =ie =0A;

f=100MHz

-11

-

pF

Similar Part No. - PDTB113ZT

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PDTB113ZT	948Kb / 12P	Low VCEsat (BISS) transistors May 2006
Nexperia B.V. All right...	PDTB113ZT	206Kb / 8P	PNP 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ 15 January 2021

More results

Similar Description - PDTB113ZT

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PDTB113E	138Kb / 10P	PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓 Rev. 02-16 November 2009
	PDTB123Y	138Kb / 10P	PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓 Rev. 02-16 November 2009
	PDTD113E	131Kb / 10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓 v
	PDTD113E	131Kb / 10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 k廓, R2 = 1 k廓 Rev. 02-16 November 2009
	PDTD123Y	132Kb / 10P	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 10 k廓 Rev. 02-16 November 2009
	PDTB123E	138Kb / 10P	PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓 Rev. 02-16 November 2009
	PDTD123Y	132Kb / 10P	NPN 500 mA, 50 V resistor-equipped transistors R1 = 2.2 k廓, R2 = 10 k廓 Rev. 02-16 November 2009
	PEMB11	144Kb / 8P	PNP/PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓 2003 Oct 03
	PDTA114E	181Kb / 14P	PNP resistor-equipped transistors; R1 = 10 k廓, R2 = 10 k廓 2004 Aug 02
Nexperia B.V. All right...	PDTA113ZMB	628Kb / 13P	PNP resistor-equipped transistor; R1 = 1 k廓, R2 = 10 k廓

More results

PDTB113ZT Datasheet(PDF) 4 Page - NXP Semiconductors

PDTB113ZT Datasheet(HTML) 4 Page - NXP Semiconductors

Similar Part No. - PDTB113ZT

Similar Description - PDTB113ZT

Html Pages

1 2 3 4 5 6 7 8 9 10

Datasheet Download

Link URL