PDTA143ET datasheet(5/14 Pages) NXP

Part #	PDTA143ET

Description	PNP resistor-equipped transistors; R1 = 4.7 k廓, R2 = 4.7 k廓

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 14 page

2004 Aug 04

5

NXP Semiconductors

Product data sheet

PNP resistor-equipped transistors;

R1 = 4.7 k

Ω, R2 = 4.7 kΩ

PDTA143E series

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = −50 V; IE = 0

−

−100

nA

ICEO

collector-emitter cut-off current

VCE = −30 V; IB = 0

−

−1

μA

VCE = −30 V; IB = 0; Tj = 150 °C

−

−50

μA

IEBO

emitter-base cut-off current

VEB = −5 V; IC = 0

−

−0.9

mA

hFE

DC current gain

VCE = −5 V; IC = −10 mA

30

−

VCEsat

collector-emitter saturation voltage

IC = −10 mA; IB = −0.5 mA

−

−150

mV

Vi(off)

input-off voltage

IC = −100 μA; VCE = −5 V

−

−1.1

−0.5

V

Vi(on)

input-on voltage

IC = −20 mA; VCE = −0.3 V

−2.5

−1.9

−

V

R1

input resistor

3.3

4.7

6.1

k

Ω

resistor ratio

0.8

1

1.2

Cc

collector capacitance

IE = ie = 0; VCB = −10 V; f = 1 MHz −

−

3

pF

R2

R1

--------

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