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PDTA115TS Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PDTA115TS
Description  PNP resistor-equipped transistors; R1 = 100 kW, R2 = open
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PDTA115TS Datasheet(HTML) 5 Page - NXP Semiconductors

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PDTA115T_SER_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 2 September 2009
5 of 17
NXP Semiconductors
PDTA115T series
PNP resistor-equipped transistors; R1 = 100 k
Ω, R2 = open
7.
Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −50 V; IE = 0 A
-
-
−100
nA
ICEO
collector-emitter
cut-off current
VCE = −30 V; IB = 0 A
-
-
−1
µA
VCE = −30 V; IB = 0 A;
Tj = 150 °C
--
−50
µA
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE = −5 V; IC = −1 mA
100
-
-
VCEsat
collector-emitter
saturation voltage
IC = −5 mA; IB = −0.25 mA
-
-
−150
mV
R1
bias resistor 1 (input)
70
100
130
k
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
f=1MHz
--3
pF
VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
Fig 1.
DC current gain as a function of collector
current; typical values
Fig 2.
Collector-emitter saturation voltage as a
function of collector current; typical values
001aab511
IC (mA)
−10−1
−102
−10
−1
102
103
hFE
10
(1)
(2)
(3)
001aab512
IC (mA)
−10−1
−102
−10
−1
−10−1
−1
VCEsat
(V)
−10−2
(1)
(2)
(3)


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