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PDTA113ZU Datasheet(PDF) 4 Page - NXP Semiconductors |
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PDTA113ZU Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 18 page PDTA113Z_SER_4 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 — 2 September 2009 4 of 18 NXP Semiconductors PDTA113Z series PNP resistor-equipped transistors; R1 = 1 k Ω, R2 = 10 kΩ 5. Limiting values [1] Refer to standard mounting conditions. [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line. 6. Thermal characteristics [1] Refer to standard mounting conditions. [2] Reflow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line. Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −50 V VCEO collector-emitter voltage open base - −50 V VEBO emitter-base voltage open collector - −5V VI input voltage positive - +5 V negative - −10 V IO output current (DC) - −100 mA ICM peak collector current - −100 mA Ptot total power dissipation Tamb ≤ 25 °C SOT416 [1] - 150 mW SOT346 [1] - 250 mW SOT883 [2][3] - 250 mW SOT54 [1] - 500 mW SOT23 [1] - 250 mW SOT323 [1] - 200 mW Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air SOT416 [1] - - 833 K/W SOT346 [1] - - 500 K/W SOT883 [2][3] - - 500 K/W SOT54 [1] - - 250 K/W SOT23 [1] - - 500 K/W SOT323 [1] - - 625 K/W |
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