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PBSS9110T Datasheet(PDF) 7 Page - NXP Semiconductors |
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PBSS9110T Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 12 page 2004 May 13 7 NXP Semiconductors Product data sheet 100 V, 1 A PNP low VCEsat (BISS) transistor PBSS9110T 001aaa376 200 400 600 hFE 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) Fig.5 DC current gain as a function of collector current; typical values. VCE = −10 V. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. 001aaa377 −0.4 −0.8 −1.2 VBE (V) 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) Fig.6 Base-emitter voltage as a function of collector current; typical values. VCE = −10 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 100 °C. 001aaa378 IC (mA) −10−1 −104 −103 −1 −102 −10 −10−1 −1 VCEsat (V) −10−2 (1) (2) (3) Fig.7 Collector-emitter saturation voltage as a function of collector current; typical values. IC/IB = 10. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. 001aaa380 IC (mA) −10−1 −104 −103 −1 −102 −10 −10−1 −1 VCEsat (V) −10−2 (1) (2) Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. Tamb = 25 °C. (1) IC/IB = 50. (2) IC/IB = 20. |
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