PBSS8110Y datasheet(1/13 Pages) NXP

Part #	PBSS8110Y

Description	100 V, 1 A NPN low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

Direct Link	http://www.nxp.com

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1.

Product profile

1.1 General description

NPN low VCEsat transistor in a SOT363 (SC-88) plastic package.

1.2 Features

SOT363 package

Low collector-emitter saturation voltage VCEsat

High collector current capability IC and ICM

High efficiency reduces heat generation

1.3 Applications

Major application segments:

Automotive 42 V power

Telecom infrastructure

Industrial

Peripheral driver:

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load driver (e.g. relays, buzzers and motors)

DC-to-DC converter

1.4 Quick reference data

PBSS8110Y

100 V, 1 A NPN low VCEsat (BISS) transistor

Rev. 02 — 21 November 2009

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

-

100

V

IC

collector current (DC)

-

1

A

ICM

peak collector current

-

3

A

RCEsat

equivalent on-resistance

-

200

m

Ω

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Similar Description - PBSS8110Y

Manufacturer	Part #	Datasheet	Description
NXP Semiconductors	PBSS8110Z	104Kb / 12P	100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01-26 April 2004
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Nexperia B.V. All right...	PBSS8110Y	299Kb / 14P	100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 - 21 November 2009
NXP Semiconductors	PBSS8110D	172Kb / 12P	100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02-11 December 2009
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PBSS8110Y Datasheet(PDF) 1 Page - NXP Semiconductors

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