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PBSS4220V Datasheet(PDF) 6 Page - NXP Semiconductors |
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PBSS4220V Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 13 page PBSS4220V_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 11 December 2009 6 of 13 NXP Semiconductors PBSS4220V 20 V, 2 A NPN low VCEsat (BISS) transistor VCE =2V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C VCE =5V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 3. DC current gain as a function of collector current; typical values Fig 4. Base-emitter voltage as a function of collector current; typical values IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C (1) IC/IB = 100 (2) IC/IB =50 (3) IC/IB =10 Fig 5. Collector-emitter saturation voltage as a function of collector current; typical values Fig 6. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa662 400 600 200 800 1000 hFE 0 IC (mA) 10−1 104 103 1102 10 (3) (2) (1) 006aaa663 0.6 0.4 0.8 1.0 VBE (V) 0.2 IC (mA) 10−1 104 103 1102 10 (3) (2) (1) 006aaa664 10−1 10−2 1 VCEsat (V) 10−3 IC (mA) 10−1 104 103 1102 10 (1) (2) (3) 006aaa665 10−1 10−2 1 VCEsat (V) 10−3 IC (mA) 10−1 104 103 1102 10 (3) (2) (1) |
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