PBSS2515E datasheet(1/12 Pages) NXP

Part #	PBSS2515E

Description	15 V, 0.5 A NPN low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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1.

Product proﬁle

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small

SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

PNP complement: PBSS3515E.

1.2 Features

I Low collector-emitter saturation voltage VCEsat

I High collector current capability IC and ICM

I High collector current gain (hFE) at high IC

I High efﬁciency due to less heat generation

I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

I DC-to-DC conversion

I MOSFET gate driving

I Motor control

I Charging circuits

I Low power switches (e.g. motors, fans)

I Portable applications

1.4 Quick reference data

[1]

Pulse test: tp ≤ 300 µs; δ≤ 0.02.

PBSS2515E

15 V, 0.5 A NPN low VCEsat (BISS) transistor

Rev. 02 — 21 April 2009

Product data sheet

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VCEO

collector-emitter voltage

open base

-

15

V

IC

collector current

-

0.5

A

ICM

peak collector current

single pulse;

tp ≤ 1ms

--1

A

RCEsat

collector-emitter

saturation resistance

IC = 500 mA;

IB =50mA

[1] -

300

500

m

Ω

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