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PBSS2515E Datasheet(PDF) 2 Page - NXP Semiconductors

Part # PBSS2515E
Description  15 V, 0.5 A NPN low VCEsat (BISS) transistor
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PBSS2515E Datasheet(HTML) 2 Page - NXP Semiconductors

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PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
2 of 12
NXP Semiconductors
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
2.
Pinning information
3.
Ordering information
4.
Marking
5.
Limiting values
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
Table 2.
Pinning
Pin
Description
Simplified outline
Graphic symbol
1
base
2
emitter
3
collector
12
3
sym021
3
2
1
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS2515E
SC-75
plastic surface-mounted package; 3 leads
SOT416
Table 4.
Marking codes
Type number
Marking code
PBSS2515E
1Q
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VCBO
collector-base voltage
open emitter
-
15
V
VCEO
collector-emitter voltage
open base
-
15
V
VEBO
emitter-base voltage
open collector
-
6
V
IC
collector current
-
0.5
A
ICM
peak collector current
single pulse;
tp ≤ 1ms
-1
A
IBM
peak base current
single pulse;
tp ≤ 1ms
-
100
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
[1] -
150
mW
[2] -
250
mW
Tj
junction temperature
-
150
°C
Tamb
ambient temperature
−65
+150
°C
Tstg
storage temperature
−65
+150
°C


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