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PBRN123ES Datasheet(PDF) 10 Page - NXP Semiconductors |
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PBRN123ES Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 17 page PBRN123E_SER_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 27 February 2007 10 of 17 NXP Semiconductors PBRN123E series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k Ω, R2 = 2.2 kΩ VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C VCE =5V (1) Tamb = −40 °C (2) Tamb =25 °C (3) Tamb = 100 °C Fig 11. On-state input voltage as a function of collector current; typical values Fig 12. Off-state input voltage as a function of collector current; typical values 006aab020 IC (mA) 10−1 103 102 110 1 10 VI(on) (V) 10−1 (3) (2) (1) 006aab021 IC (mA) 10−1 102 10 1 1 10 VI(off) (V) 10−1 (3) (2) (1) |
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