PBRN123E datasheet(3/17 Pages) NXP

Part #	PBRN123E

Description	NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k?

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Manufacturer	NXP [NXP Semiconductors]

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PBRN123E_SER_1

Product data sheet

Rev. 01 — 27 February 2007

3 of 17

NXP Semiconductors

PBRN123E series

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k

Ω, R2 = 2.2 kΩ

3.

Ordering information

[1]

Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 4.

Ordering information

Type number

Package

Name

Description

Version

PBRN123EK

SC-59A

plastic surface-mounted package; 3 leads

SOT346

PBRN123ES[1]

SC-43A

plastic single-ended leaded (through hole) package;

3 leads

SOT54

PBRN123ET

-

plastic surface-mounted package; 3 leads

SOT23

Table 5.

Marking codes

Type number

Marking code[1]

PBRN123EK

G3

PBRN123ES

N123ES

PBRN123ET

*7J

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

40

V

VCEO

collector-emitter voltage

open base

-

40

V

VEBO

emitter-base voltage

open collector

-

10

V

VI

input voltage

positive

-

+22

V

negative

-

−10

V

IO

output current

PBRN123EK, PBRN123ET

[1] -

600

mA

[2][3] -

700

mA

PBRN123ES

[1] -

800

mA

IORM

repetitive peak output current

PBRN123EK, PBRN123ET tp ≤ 1 ms; δ≤ 0.33

-

800

mA

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