PBLS6021D_1

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 01 — 12 August 2009

3 of 16

NXP Semiconductors

PBLS6021D

60 V, 1.5 A PNP BISS loadswitch

5.

Limiting values

[1]

Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2]

[3]

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

−60

V

collector-emitter voltage

open base

-

−60

V

emitter-base voltage

open collector

-

−5V

collector current

-

−1.5

A

peak collector current

single pulse;

-

−3A

base current

-

−300

mA

peak base current

single pulse;

-

−1A

total power dissipation

[1] -

370

mW

[2] -

480

mW

[3] -

630

mW

TR2; NPN resistor-equipped transistor

collector-base voltage

open emitter

-

50

V

collector-emitter voltage

open base

-

50

V

emitter-base voltage

open collector

-

10

V

input voltage

positive

-

+12

V

negative

-

−10

V

output current

-

100

mA

peak collector current

single pulse;

-

100

mA

total power dissipation

[1][2]

[3]

-

200

mW

Per device

total power dissipation

[1] -

480

mW

[2] -

590

mW

[3] -

760

mW

junction temperature

-

150

°C

ambient temperature

−55

+150

°C

storage temperature

−65

+150

°C