DMG3415UFY4

Document number: DS31842 Rev. 4 - 2

2 of 6

www.diodes.com

December 2009

© Diodes Incorporated

DMG3415UFY4

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 5)

Drain-Source Breakdown Voltage

-16

⎯

⎯

V

Zero Gate Voltage Drain Current

⎯

⎯

-1.0

μA

Gate-Source Leakage

⎯

⎯

±10

±500

μA

nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

-0.3

-0.55

-1.0

V

Static Drain-Source On-Resistance

⎯

31

39

m

Ω

40

52

51

65

Forward Transfer Admittance

⎯

7.9

⎯

S

DYNAMIC CHARACTERISTICS (Note 6)

Input Capacitance

⎯

281.9

⎯

pF

f = 1.0MHz

Output Capacitance

⎯

152.0

⎯

pF

Reverse Transfer Capacitance

⎯

37.9

⎯

pF

Gate Resistnace

⎯

250

⎯

Ω

SWITCHING CHARACTERISTICS (Note 6)

Total Gate Charge

⎯

10

⎯

nC

Gate-Source Charge

⎯

1.5

⎯

nC

Gate-Drain Charge

⎯

2.4

⎯

nC

Turn-On Delay Time

⎯

79.0

⎯

ns

Turn-On Rise Time

⎯

175.2

⎯

ns

Turn-Off Delay Time

⎯

884.5

⎯

ns

Turn-Off Fall Time

⎯

568

⎯

ns

Notes:

5. Short duration pulse test used to minimize self-heating effect.

6. Guaranteed by design. Not subject to production testing.

01

2

3

4

5

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

0

4

8

12

16

20

V

= 2.0V

GS

V

= 3.0V

GS

V

= 3.5V

GS

V

= 4.5V

GS

V

= 2.5V

GS

V

= 1.5V

GS

0

4

8

12

16

20

0.5

1

1.5

2

2.5

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

DS