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L6563STR Datasheet(PDF) 13 Page - STMicroelectronics |
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L6563STR Datasheet(HTML) 13 Page - STMicroelectronics |
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L6563S Electrical characteristics Doc ID 16116 Rev 3 13/42 VZCDA Arming voltage (positive-going edge) 1.1 1.4 1.9 V VZCDT Triggering voltage (negative-going edge) 0.5 0.7 0.9 V IZCDb Input bias current VZCD = 1 to 4.5 V 1 µA IZCDsrc Source current capability -2.5 -4 mA IZCDsnk Sink current capability 2.5 5 mA Tracking boost function ΔV Dropout voltage VVFF-VTBO ITBO = 0.2 mA -20 20 mV ITBO Linear operation 0 0.2 mA IINV-ITBO current mismatch ITBO = 25 µA to 0.2mA -5.5 +1.0 % IINV-ITBO current mismatch ITBO = 25 µA to 0.2mA TJ = 25 °C -4.0 +0 % VTBOclamp Clamp voltage (3) V VFF = 4 V 2.9 3 3.1 V ITBO_Pull Pull-up current VTBO = 1 V VFF = VMULT = 0 V 2 μA PWM_STOP Ileak High level leakage current VPWM_STOP = Vcc 1 µA VL Low level IPWM_STOP = 0.5 mA 1 V RUN function IRUN Input bias current VRUN = 0 to 3 V -1 µA VDIS Disable threshold (3) voltage falling 0.745 0.8 0.855 V VEN Enable threshold (3) voltage rising 0.845 0.88 0.915 V Start-up timer tSTART_DEL Start-up delay First cycle after wake-up 25 50 75 µs tSTART Timer period 75 150 300 µs Restart after VCS > VCS_th 150 300 600 Voltage feedforward VVFF Linear operation range 0.8 3 V ΔV Dropout VMULTpk-VVFF Vcc < VccOn 800 mV Vcc > or = to VccOn 20 ΔVVFF Line drop detection threshold Below peak value 40 70 100 mV ΔVVFF Line drop detection threshold Below peak value TJ = 25 °C 50 70 90 mV Table 4. Electrical characteristics (continued) Symbol Parameter Test condition Min. Typ. Max. Unit |
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