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ZTX692B Datasheet(PDF) 1 Page - Zetex Semiconductors

Part No. ZTX692B
Description  NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZTX692B Datasheet(HTML) 1 Page - Zetex Semiconductors

   
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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 – APRIL 94
FEATURES
* 70 Volt VCEO
* Gain of 400 at IC=500mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Relay drivers
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
70
V
Collector-Emitter Voltage
VCEO
70
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
2A
Continuous Collector Current
IC
1A
Practical Power Dissipation*
Ptotp
1.5
W
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
70
V
IC=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO
70
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5V
IE=100µA
Collector Cut-Off Current
ICBO
0.1
µ
A
VCB=55V
Emitter Cut-Off Current
IEBO
0.1
µ
A
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.15
0.5
V
V
IC=0.1A, IB=0.5mA*
IC=1A, IB=10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.9
V
IC=1A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
500
400
150
IC=100mA, VCE=2V*
IC=500mA, VCE=2V*
IC=1A, VCE=2V*
E-Line
TO92 Compatible
ZTX692B
3-241
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Transition Frequency
fT
150
MHz
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Cibo
200
pF
VEB=0.5V, f=1MHz
Output Capacitance
Cobo
12
pF
VCB=10V, f=1MHz
Switching Times
ton
toff
46
1440
ns
ns
IC=500mA, IB!=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX692B
-40
0.0001
Derating curve
T -Temperature (°C)
Maximum transient thermal impedance
Pulse Width (seconds)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t1
tP
D=t1/tP
1.0
0.5
2.0
1.5
Case
temperature
2.5
Ambient
temperat
ure
0
D=1 (D.C.)
3-242


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