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ZTX688B Datasheet(PDF) 1 Page - Zetex Semiconductors

Part No. ZTX688B
Description  NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZTX688B Datasheet(HTML) 1 Page - Zetex Semiconductors

   
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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 – MAY 94
FEATURES
* 12 Volt VCEO
* Gain of 400 at IC=3 Amps
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Flash gun convertors
* Battery powered circuits
* Motor drivers
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
12
V
Collector-Emitter Voltage
VCEO
12
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
10
A
Continuous Collector Current
IC
3A
Practical Power Dissipation*
Ptotp
1.5
W
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
12
V
IC=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO
12
V
IC=10mA*
Emitter-Base Breakdown
Voltage
V(BR)EBO
5V
IE=100µA
Collector Cut-Off Current
ICBO
0.1
µ
A
VCB=10V
Emitter Cut-Off Current
IEBO
0.1
µ
A
VEB=4V
Collector-Emitter Saturation
Voltage
VCE(sat)
0.04
0.06
0.18
0.35
V
V
V
V
IC=0.1A, IB=1mA
IC=0.1A, IB=0.5mA*
IC=1A, IB=50mA*
IC=3A, IB=20mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.1
V
IC=3A, IB=20mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1
V
IC=3A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
500
400
100
IC=0.1A, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
E-Line
TO92 Compatible
ZTX688B
3-232
C
B
E
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Transition Frequency
fT
150
MHz
IC=50mA, VCE=5V
f=50MHz
Input Capacitance
Cibo
200
pF
VEB=0.5V, f=1MHz
Output Capacitance
Cobo
40
pF
VCB=10V, f=1MHz
Switching Times
ton
toff
40
500
ns
ns
IC=500mA, IB1=50mA
IB2=50mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2†
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
ZTX688B
-40
0.0001
Derating curve
T -Temperature (°C)
Maximum transient thermal impedance
Pulse Width (seconds)
10
100
1
0.1
0.01
-20
0
20 40
60 80 100 120
200
180
160
140
0.001
0
100
200
D=0.2
D=0.1
Single Pulse
D=0.5
t1
tP
D=t1/tP
1.0
0.5
2.0
1.5
Case
temperature
2.5
Ambient
temperat
ure
0
D=1 (D.C.)
3-233


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