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IXFN520N075T2 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXFN520N075T2 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXFN520N075T2 IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. SOT-227B (IXFN) Outline (M4 screws (4x) supplied) Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs V DS = 10V, ID = 60A, Note 1 65 105 S C iss 41 nF C oss V GS = 0V, VDS = 25V, f = 1MHz 4150 pF C rss 530 pF R Gi Gate Input Resistance 1.36 Ω t d(on) 48 ns t r 36 ns t d(off) 80 ns t f 35 ns Q g(on) 545 nC Q gs V GS = 10V, VDS = 0.5 • VDSS, ID = 260A 177 nC Q gd 135 nC R thJC 0.16 °C/W R thCS 0.05 °C/W Source-Drain Diode Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. I S V GS = 0V 520 A I SM Repetitive, Pulse Width Limited by T JM 1600 A V SD I F = 100A, VGS = 0V, Note 1 1.25 V t rr 150 ns I RM 7 A Q RM 357 nC Resistive Switching Times V GS = 10V, VDS = 0.5 • VDSS, ID = 200A R G = 1Ω (External) I F = 150A, VGS = 0V -di/dt = 100A/ μs V R = 37.5V PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. |
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