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IXGH36N60B3C1 Datasheet(PDF) 2 Page - IXYS Corporation

Part # IXGH36N60B3C1
Description  GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGH36N60B3C1 Datasheet(HTML) 2 Page - IXYS Corporation

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IXGH36N60B3C1
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or moreof the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
TO-247 Outline
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80 21.46
.819
.845
E
15.75 16.26
.610
.640
e
5.20
5.72 0.205 0.225
L
19.81 20.32
.780
.800
L1
4.50
.177
∅P
3.55
3.65
.140
.144
Q
5.89
6.40 0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
∅ P
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C
= 30A, V
CE = 10V, Note 1
28
42
S
C
ies
2430
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
390
pF
C
res
28
pF
Q
g
80
nC
Q
ge
I
C
= 30A, V
GE = 15V, VCE = 0.5 • VCES
12
nC
Q
gc
36
nC
t
d(on)
20
ns
t
ri
26
ns
E
on
0.39
mJ
t
d(off)
125
200
ns
t
fi
100
160
ns
E
off
0.80
1.50
mJ
t
d(on)
20
ns
t
ri
27
ns
E
on
0.43
mJ
t
d(off)
180
ns
t
fi
170
ns
E
off
1.50
mJ
R
thJC
0.50
°C/W
R
thCS
0.21
°C/W
Inductive load, T
J = 25°
°°°°C
I
C = 30A, VGE = 15V
V
CE = 400V, RG = 5Ω
Note 2
Inductive load, T
J = 125°
°°°°C
I
C = 30A, VGE = 15V
V
CE = 400V, RG = 5Ω
Note 2
Reverse Diode (SiC)
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
V
F
I
F = 20A, VGE = 0V, Note 1
1.65
2.10
V
T
J = 125°C
1.80
V
R
thJC
0.90 °C/W
Notes
1. Pulse test, t
≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher V
CE(Clamp), TJ or RG.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.


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