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IXGH36N60B3C1 Datasheet(PDF) 2 Page - IXYS Corporation |
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IXGH36N60B3C1 Datasheet(HTML) 2 Page - IXYS Corporation |
2 / 6 page IXGH36N60B3C1 IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537 TO-247 Outline Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 1 2.2 2.54 .087 .102 A 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 C .4 .8 .016 .031 D 20.80 21.46 .819 .845 E 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC ∅ P Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. g fs I C = 30A, V CE = 10V, Note 1 28 42 S C ies 2430 pF C oes V CE = 25V, VGE = 0V, f = 1MHz 390 pF C res 28 pF Q g 80 nC Q ge I C = 30A, V GE = 15V, VCE = 0.5 • VCES 12 nC Q gc 36 nC t d(on) 20 ns t ri 26 ns E on 0.39 mJ t d(off) 125 200 ns t fi 100 160 ns E off 0.80 1.50 mJ t d(on) 20 ns t ri 27 ns E on 0.43 mJ t d(off) 180 ns t fi 170 ns E off 1.50 mJ R thJC 0.50 °C/W R thCS 0.21 °C/W Inductive load, T J = 25° °°°°C I C = 30A, VGE = 15V V CE = 400V, RG = 5Ω Note 2 Inductive load, T J = 125° °°°°C I C = 30A, VGE = 15V V CE = 400V, RG = 5Ω Note 2 Reverse Diode (SiC) Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. V F I F = 20A, VGE = 0V, Note 1 1.65 2.10 V T J = 125°C 1.80 V R thJC 0.90 °C/W Notes 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. Switching times & energy losses may increase for higher V CE(Clamp), TJ or RG. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. |
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