ZTX653 datasheet(1/3 Pages) ZETEX

Part #	ZTX653

Description	NPN SILICON PLANAR(MEDIUM POWER TRANSISTORS)

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Manufacturer	ZETEX [Zetex Semiconductors]

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NPN SILICON PLANAR

MEDIUM POWER TRANSISTORS

ISSUE 2 JULY 94

FEATURES

* 100 Volt VCEO

* 2 Amp continuous current

* Low saturation voltage

*Ptot=1 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

ZTX652

ZTX653

UNIT

Collector-Base Voltage

VCBO

100

120

V

Collector-Emitter Voltage

VCEO

80

100

V

Emitter-Base Voltage

VEBO

5V

Peak Pulse Current

ICM

6A

Continuous Collector Current

IC

2A

Power Dissipation at Tamb=25°C

derate above 25°C

Ptot

1

5.7

W

mW/°C

Operating and Storage Temperature Range

Tj:Tstg

-55 to +200

°C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX652

ZTX653

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

Collector-Base

Breakdown

Voltage

V(BR)CBO 100

120

V

IC=100µA

Collector-Emitter

Breakdown

Voltage

V(BR)CEO 80

100

V

IC=10mA*

Emitter-Base

Breakdown

Voltage

V(BR)EBO 55V

IE=100µA

Collector Cut-Off

Current

ICBO

0.1

10

0.1

10

µ

A

µ

A

µ

A

µ

A

VCB=80V

VCB=100V

VCB=80V,Tamb=100°C

VCB=100V,Tamb=100°C

Emitter Cut-Off

Current

IEBO

0.1

µ

A

VEB=4V

Collector-Emitter

Saturation Voltage

VCE(sat)

0.13

0.23

0.3

0.5

0.13

0.23

0.3

0.5

V

IC=1A, IB=100mA*

IC=2A, IB=200mA*

Base-Emitter

Saturation Voltage

VBE(sat)

0.9

1.25

0.9

1.25 V

IC=1A, IB=100mA*

Base-Emitter

Turn-On Voltage

VBE(on)

0.8

1

0.8

1

V

IC=1A, VCE=2V*

ZTX652

ZTX653

3-223

C

B

E

E-Line

TO92 Compatible

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL

ZTX652

ZTX653

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

Transition

Frequency

fT

140

175

140

175

MHz IC=100mA, VCE=5V

f=100MHz

Switching Times

ton

80

ns

IC=500mA, VCC=10V

IB1=IB2=50mA

toff

1200

ns

Output Capacitance Cobo

30

pF

VCB=10V f=1MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance: Junction to Ambient1

Junction to Ambient2

Junction to Case

Rth(j-amb)1

Rth(j-amb)2

Rth(j-case)

175

116

70

°C/W

Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

ZTX652

ZTX653

-40

0.0001

Derating curve

T -Temperature (°C)

Maximum transient thermal impedance

Pulse Width (seconds)

10

100

1

0.1

0.01

-20

0

20 40

60 80 100 120

200

180

160

140

0.001

0

100

200

D=0.2

D=0.1

Single Pulse

D=0.5

t1

tP

D=t1/tP

1.0

0.5

2.0

1.5

Case

temperature

2.5

Ambient

temperat

ure

0

D=1 (D.C.)

3-222

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