Electronic Components Datasheet Search |
|
ZTX653 Datasheet(PDF) 1 Page - Zetex Semiconductors |
|
ZTX653 Datasheet(HTML) 1 Page - Zetex Semiconductors |
1 / 3 page NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage *Ptot=1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX652 ZTX653 UNIT Collector-Base Voltage VCBO 100 120 V Collector-Emitter Voltage VCEO 80 100 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 6A Continuous Collector Current IC 2A Power Dissipation at Tamb=25°C derate above 25°C Ptot 1 5.7 W mW/°C Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL ZTX652 ZTX653 UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. Collector-Base Breakdown Voltage V(BR)CBO 100 120 V IC=100µA Collector-Emitter Breakdown Voltage V(BR)CEO 80 100 V IC=10mA* Emitter-Base Breakdown Voltage V(BR)EBO 55V IE=100µA Collector Cut-Off Current ICBO 0.1 10 0.1 10 µ A µ A µ A µ A VCB=80V VCB=100V VCB=80V,Tamb=100°C VCB=100V,Tamb=100°C Emitter Cut-Off Current IEBO 0.1 0.1 µ A VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.13 0.23 0.3 0.5 0.13 0.23 0.3 0.5 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 1.25 0.9 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 0.8 1 0.8 1 V IC=1A, VCE=2V* ZTX652 ZTX653 3-223 C B E E-Line TO92 Compatible ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL ZTX652 ZTX653 UNIT CONDITIONS. MIN. TYP. MAX. MIN. TYP. MAX. Transition Frequency fT 140 175 140 175 MHz IC=100mA, VCE=5V f=100MHz Switching Times ton 80 80 ns IC=500mA, VCC=10V IB1=IB2=50mA toff 1200 1200 ns Output Capacitance Cobo 30 30 pF VCB=10V f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% THERMAL CHARACTERISTICS PARAMETER SYMBOL MAX. UNIT Thermal Resistance: Junction to Ambient1 Junction to Ambient2 Junction to Case Rth(j-amb)1 Rth(j-amb)2 Rth(j-case) 175 116 70 °C/W °C/W °C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. ZTX652 ZTX653 -40 0.0001 Derating curve T -Temperature (°C) Maximum transient thermal impedance Pulse Width (seconds) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 D=0.2 D=0.1 Single Pulse D=0.5 t1 tP D=t1/tP 1.0 0.5 2.0 1.5 Case temperature 2.5 Ambient temperat ure 0 D=1 (D.C.) 3-222 |
Similar Part No. - ZTX653 |
|
Similar Description - ZTX653 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |