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IXFK230N20T Datasheet(PDF) 1 Page - IXYS Corporation |
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IXFK230N20T Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page  © 2009 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Maximum Ratings V DSS T J = 25 °C to 175°C 200 V V DGR T J = 25 °C to 175°C, R GS = 1MΩ 200 V V GSS Continuous ± 20 V V GSM Transient ± 30 V I D25 T C = 25°C 230 A I L(RMS) External Lead Current Limit 160 A I DM T C = 25°C, Pulse Width Limited by TJM 630 A I A T C = 25°C 100 A E AS T C = 25°C3 J dV/dt I S ≤ I DM, VDD ≤ VDSS, TJ ≤ 175°C 20 V/ns P D T C = 25°C 1670 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +175 °C T L 1.6mm (0.062 in.) from Case for 10s 300 °C T SOLD Plastic Body for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in. F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Weight TO-264 10 g PLUS247 6 g Symbol Test Conditions Characteristic Values (T J = 25°C Unless Otherwise Specified) Min. Typ. Max. BV DSS V GS = 0V, ID = 3mA 200 V V GS(th) V DS = VGS, ID = 8mA 2.5 5.0 V I GSS V GS = ± 20V, VDS = 0V ± 200 nA I DSS V DS = VDSS, VGS= 0V 50 µA T J = 150°C 3 mA R DS(on) V GS = 10V, ID = 60A, Note 1 7.5 m Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK230N20T IXFX230N20T V DSS = 200V I D25 = 230A R DS(on) ≤ ≤≤≤≤ 7.5m Ω Ω Ω Ω Ω t rr ≤≤≤≤≤ 200ns DS100133(03/09) GigaMOSTM Power MOSFET Features International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low R DS(on) Advantages Easy to Mount Space Savings High Power Density Applications Synchronous Recification DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications G = Gate D = Drain S = Source TAB = Drain PLUS247 (IXFX) TO-264 (IXFK) S G D (TAB) (TAB) Advance Technical Information |
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