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ZTX618 Datasheet(PDF) 3 Page - Zetex Semiconductors

Part No. ZTX618
Description  NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZTX618 Datasheet(HTML) 3 Page - Zetex Semiconductors

   
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0.2
0
0.3
0
0.1
0.4
0.2
0.3
-55°C
100°C
25°C
I+/I*=50
I+/I*=10
I+/I*=50
I+/I*=100
25°C
25°C
100°C
-55°C
25°C
100°C
-55°C
I+/I*=50
V+-=2V
25°C
100°C
-55°C
V+-=2V
1.0
0.8
0.4
0.6
0.2
0
1.2
1
10
0.01
0.1
100V
10V
1V
0.1V
0
0.2
450
225
0.4
0.1
1mA
100mA
10mA
1A
10A
10A
1A
100mA
10mA
1mA
10A
1A
10mA
100mA
1mA
1mA
100mA
10mA
1A
10A
1mA
100mA
10mA
1A
10A
0.4
0.8
0.6
0
1.0
100
µs
10ms
1s
DC
100ms
1ms
IC-Collector Current
IC-Collector Current
IC-Collector Current
IC-Collector Current
IC-Collector Current
hFE v IC
VBE(sat) v Ic
VBE(on) v IC
VCE(sat) v IC
VCE(sat) v IC
VCE - Collector Voltage
Safe Operating Area
Single Pulse Test Tamb=25C
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
20
100
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
20
27
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
58.3
V
IE=100µA
Collector Cut-Off
Current
ICBO
100
nA
VCB=16V
Emitter Cut-Off
Current
IEBO
100
nA
VEB=4V
Collector Emitter
Cut-Off Current
ICES
100
nA
VCES=16V
Collector-Emitter
Saturation Voltage
VCE(sat)
7
80
210
15
150
255
mV
mV
mV
IC=0.1A, IB=10mA*
IC=1A, IB=10mA*
IC=3.5A, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
0.93
1.05
V
IC=3.5A, IB=50mA*
Base-Emitter
Turn-On Voltage
VBE(on)
0.86
1.0
V
IC=3.5A, VCE=2V*
Static Forward
Current Transfer
Ratio
hFE
200
300
170
40
400
450
300
85
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=3A, VCE=2V*
IC=10A, VCE=2V*
Transition
Frequency
fT
100
140
MHz
IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
23
30
pF
VCB=10V, f=1MHz
Turn-On Time
t(on)
170
ns
VCC=10V, IC=1A
IB1=-IB2=10mA
Turn-Off Time
t(off)
400
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZTX618
ZTX618


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