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ZTX600 Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. ZTX600
Description  NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZTX600 Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 – JUNE 94
FEATURES
* 160 Volt VCEO
* 1 Amp continuous current
* Gain of 5K at IC=1 Amp
*Ptot= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT
Collector-Base Voltage
VCBO
160
180
V
Collector-Emitter Voltage
VCEO
140
160
V
Emitter-Base Voltage
VEBO
10
V
Peak Pulse Current
ICM
4A
Continuous Collector Current
IC
1A
Power Dissipation at Tamb=25°C
derate above 25°C
Ptot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V(BR)CBO 160
180
V
IC=100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO 140
160
V
IC=10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO 10
10
V
IE=100µA
Collector Cut-Off
Current
ICBO
0.01
10
0.01
10
µ
A
µ
A
µ
A
µ
A
VCB=140V
VCB=160V
VCB=140V,T==100°C
VCB=160V,T==100°C
Emitter Cut-Off
Current
IEBO
0.1
0.1
µ
A
VEB=8V
Colllector-Emitter
Cut-Off Current
ICES
10
10
µ
A
µ
A
VCES=140V
VCES=160V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.75
0.85
1.1
1.2
0.75
0.85
1.1
1.2
V
V
IC=0.5A, IB=5mA*
IC=1A, IB=10mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.7
1.9
1.7
1.9
V
IC=1A, IB=10mA*
Base-Emitter
Turn-On Voltage
VBE(on)
1.5
1.7
1.5
1.7
V
IC=1A, VCE=5V*
E-Line
TO92 Compatible
ZTX600
ZTX601
3-206
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP. MAX. MIN. TYP. MAX.
Static Forward
Current Transfer
Ratio
Group A
Group B
hFE
1K
2K
1K
100K
1K
2K
1K
100K
IC=50mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
1K
2K
1K
2K
5K
3K
20K
1K
2K
1K
2K
5K
3K
20K
IC=50mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
5K
10K
5K
10K
20K
10K
100K
5K
10K
5K
10K
20K
10K
100K
IC=50mA, VCE=10V*
IC=0.5A, VCE=10V*
IC=1A, VCE=10V*
Transition
Frequency
fT
150
250
150
250
MHz IC=100mA,
VCE=10V f=20MHz
Input Capacitance Cibo
60
90
60
90
pF
VEB=0.5V, f=1MHz
Output
Capacitance
Cobo
10
15
10
15
pF
VCE=10V, f=1MHz
Switching Times
ton
0.75
0.75
µ
s
IC=0.5A, VCE=10V
IB1=IB2=0.5mA
toff
2.2
2.2
µ
s
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
The maximum permissible operational temperature can be obtained from this graph using the
following equation
Tamb(max) =
Power (max ) − Power (act)
0.0057
+25°
C
Tamb(max)= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given VCE
and source resistance (RS)
Power(actual)= Actual power dissipation in users circuit
C
B
E
ZTX600
ZTX601
Voltage Derating Graph
VCE - Collector-Emitter Voltage (Volts)
1.0
0.8
0.6
0.4
0
0.2
R5 = 5KΩ
1
10
100
DC Conditions
R5 = 50KΩ
R5 = ∞
200
R5 = 1MΩ
3-207


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