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BUK7107-55ATE Datasheet(PDF) 3 Page - NXP Semiconductors |
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BUK7107-55ATE Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 15 page BUK7107-55ATE_2 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 — 19 February 2009 3 of 15 NXP Semiconductors BUK7107-55ATE N-channel TrenchPLUS standard level FET 4. Limiting values [1] Current is limited by power dissipation chip rating. Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 55 V VGS gate-source voltage -20 20 V ID drain current Tmb =25 °C; VGS =10 V; see Figure 2; see Figure 3; [1] -75 A [1] - 140 A Tmb = 100 °C; VGS =10 V; [1] -75 A IDM peak drain current Tmb =25 °C; tp ≤ 10 µs; pulsed - 560 A Ptot total power dissipation Tmb =25 °C; see Figure 1 - 272 W IGS(CL) gate-source clamping current continuous - 10 mA pulsed; tp =5ms; δ =0.01 - 50 mA Visol(FET-TSD) FET to temperature sense diode isolation voltage -100 100 V Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C VDGS drain-gate voltage IDG =250 µA - 55 V Source-drain diode IS source current Tmb = 25 °C - 140 A -75 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb = 25 °C - 560 A Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID =68A; Vsup ≤ 55 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped - 460 mJ Electrostatic Discharge VESD electrostatic discharge voltage HBM; C=100pF; R=1.5k Ω -6 kV |
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