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BUK7105-40AIE Datasheet(PDF) 4 Page - NXP Semiconductors |
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BUK7105-40AIE Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page BUK7105-40AIE_5 © NXP B.V. 2009. All rights reserved. Product data sheet Rev. 05 — 9 February 2009 4 of 15 NXP Semiconductors BUK7105-40AIE N-channel TrenchPLUS standard level FET Fig 1. Normalized total power dissipation as a function of mounting base temperature Fig 2. Continuous drain current as a function of mounting base temperature Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage Tmb (°C) 0 200 150 50 100 03na19 40 80 120 Pder (%) 0 Tmb (°C) 0 200 150 50 100 03ng16 80 40 120 160 ID (A) 0 capped at 75A due to package 03ng17 1 10 102 103 1 10 102 VDS (V) ID (A) DC 100 ms 10 ms Limit RDSon = VDS/ID 1 ms tp = 10 µs 100 µs Capped at 75 A due to package |
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