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ZTX1048A Datasheet(PDF) 2 Page - Zetex Semiconductors

Part No. ZTX1048A
Description  NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZTX1048A Datasheet(HTML) 2 Page - Zetex Semiconductors

   
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NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 2 - JANUARY 1995
Full characterised data now available
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
ZTX1048A
UNIT
Collector-Base Voltage
VCBO
50
V
Collector-Emitter Voltage
VCEO
17.5
V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM
20
A
Continuous Collector Current
IC
4A
Base Current
IB
500
mA
Power Dissipation at Tamb=25°C
Ptot
1W
Operating and Storage Temperature
Range
Tj:Tstg
-55 to +200
°C
ZTX1048A
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX1048A
UNIT
CONDITIONS.
MIN.
TYP.
MAX.
Collector-Base Breakdown
Voltage
V(BR)CBO 50
85
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
50
85
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
17.5
24
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
50
85
V
IC=100µA, VEB=1V
Emitter-Base Breakdown
Voltage
V(BR)EBO 58.7
V
IE=100µA
Collector Cut-Off Current
ICBO
0.3
10
nA
VCB=35V
Emitter Cut-Off Current
IEBO
0.3
10
nA
VEB=4V
Collector Emitter Cut-Off
Current
ICES
0.3
10
nA
VCES=35V
Collector-Emitter Saturation
Voltage
VCE(sat)
27
55
110
210
45
75
150
245
mV
mV
mV
mV
IC=0.5A, IB=10mA*
IC=1A, IB=10mA*
IC=2A, IB=10mA*
IC=4A, IB=20mA*
Base-Emitter
Saturation Voltage
VBE(sat)
860
950
mV
IC=4A, IB=20mA*
Base-Emitter Turn-On
Voltage
VBE(on)
860
950
mV
IC=4A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
280
300
300
220
50
440
450
450
330
80
1200
IC=10mA, VCE=2V*
IC=0.5A, VCE=2V*
IC=1A, VCE=2V*
IC=4A, VCE=2V*
IC=20A, VCE=2V*
Transition Frequency
fT
150
MHz
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
60
80
pF
VCB=10V, f=1MHz
Switching Times
ton
130
ns
IC=4A, IB=40mA, VCC=10V
toff
180
ns
IC=4A, IB=±40mA, VCC=10V
ZTX1048A
C
B
E
E-Line
TO92 Compatible
3-337
3-338


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