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ZTX1048A Datasheet(PDF) 2 Page - Zetex Semiconductors |
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ZTX1048A Datasheet(HTML) 2 Page - Zetex Semiconductors |
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NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - JANUARY 1995 Full characterised data now available ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX1048A UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 17.5 V Emitter-Base Voltage VEBO 5V Peak Pulse Current ICM 20 A Continuous Collector Current IC 4A Base Current IB 500 mA Power Dissipation at Tamb=25°C Ptot 1W Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C ZTX1048A ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated). PARAMETER SYMBOL ZTX1048A UNIT CONDITIONS. MIN. TYP. MAX. Collector-Base Breakdown Voltage V(BR)CBO 50 85 V IC=100µA Collector-Emitter Breakdown Voltage VCES 50 85 V IC=100µA Collector-Emitter Breakdown Voltage VCEO 17.5 24 V IC=10mA Collector-Emitter Breakdown Voltage VCEV 50 85 V IC=100µA, VEB=1V Emitter-Base Breakdown Voltage V(BR)EBO 58.7 V IE=100µA Collector Cut-Off Current ICBO 0.3 10 nA VCB=35V Emitter Cut-Off Current IEBO 0.3 10 nA VEB=4V Collector Emitter Cut-Off Current ICES 0.3 10 nA VCES=35V Collector-Emitter Saturation Voltage VCE(sat) 27 55 110 210 45 75 150 245 mV mV mV mV IC=0.5A, IB=10mA* IC=1A, IB=10mA* IC=2A, IB=10mA* IC=4A, IB=20mA* Base-Emitter Saturation Voltage VBE(sat) 860 950 mV IC=4A, IB=20mA* Base-Emitter Turn-On Voltage VBE(on) 860 950 mV IC=4A, VCE=2V* Static Forward Current Transfer Ratio hFE 280 300 300 220 50 440 450 450 330 80 1200 IC=10mA, VCE=2V* IC=0.5A, VCE=2V* IC=1A, VCE=2V* IC=4A, VCE=2V* IC=20A, VCE=2V* Transition Frequency fT 150 MHz IC=50mA, VCE=10V f=50MHz Output Capacitance Cobo 60 80 pF VCB=10V, f=1MHz Switching Times ton 130 ns IC=4A, IB=40mA, VCC=10V toff 180 ns IC=4A, IB=±40mA, VCC=10V ZTX1048A C B E E-Line TO92 Compatible 3-337 3-338 |
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