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ZTX1047A Datasheet(PDF) 3 Page - Zetex Semiconductors

Part No. ZTX1047A
Description  NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
Download  4 Pages
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Maker  ZETEX [Zetex Semiconductors]
Homepage  http://www.diodes.com/
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ZTX1047A Datasheet(HTML) 3 Page - Zetex Semiconductors

   
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1mA
100
200
300
400
500
600
700
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
0.2
0.4
0.6
0.8
0.8
0.6
0.4
0.2
10mA 100mA
1A
10A
10V
1V
100
1
0.1
10
100A
100mA
1mA 10mA
100A
1A
10A
10A
1A
100A
10mA
1mA
100mA
10A
1A
100A
10mA
1mA
100mA
100mA
1mA 10mA
100A
1A
10A
1.4
1.2
1.2
1.0
TYPICAL CHARACTERISTICS
IC-Collector Current
IC-Collector Current
IC-Collector Current
IC-Collector Current
VCE - Collector Voltage
IC-Collector Current
hFE v IC
VBE(sat) v Ic
VBE(on) v IC
VCE(sat) v IC
VCE(sat) v IC
Safe Operating Area
Single Pulse Test Tamb=25C
+25°C
IC/IB=50
IC/IB=100
IC/IB=300
IC/IB=100
+100°C
+175°C
+25°C
-55°C
IC/IB=100
VCE=2V
VCE=2V
+25°C
+100°C
-55°C
+25°C
-55°C
+175°C
+100°C
DC
1s
100ms
10ms
1ms
100us
+25°C
-55°C
+175°C
+100°C
0.1V
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 35
55
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
35
55
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCEO
10
14
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
35
55
V
IC=100µA, VEB=1V
Emitter-Base Breakdown
Voltage
V(BR)EBO 5
8.7
V
IE=100µA
Collector Cut-Off Current
ICBO
0.3
10
nA
VCB=20V
Emitter Cut-Off Current
IEBO
0.3
10
nA
VEB=4V
Collector Emitter Cut-Off
Current
ICES
0.3
10
nA
VCES=20V
Collector-Emitter Saturation
Voltage
VCE(sat)
23
44
120
130
40
70
185
190
mV
mV
mV
mV
IC=0.5A, IB=10mA*
IC=1A, IB=10mA*
IC=3A, IB=10mA*
IC=4A, IB=20mA*
Base-Emitter
Saturation Voltage
VBE(sat)
860
950
mV
IC=4A, IB=20mA*
Base-Emitter Turn-On
Voltage
VBE(on)
810
900
mV
IC=4A, VCE=2V*
Static Forward Current
Transfer Ratio
hFE
280
300
240
150
60
440
450
380
230
110
1200
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=4A, VCE=2V*
IC=10A, VCE=2V*
IC=20A, VCE=2V*
Transition Frequency
fT
150
MHz
IC=50mA, VCE=10V
f=50MHz
Output Capacitance
Cobo
85
110
pF
VCB=10V, f=1MHz
Switching Times
ton
130
ns
IC=4A, IB=40mA, VCC=10V
toff
180
ns
IC=4A, IB=±40mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZTX1047A
ZTX1047A


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