PSMN1R7-30YL

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Product data sheet

Rev. 04 — 20 April 2010

8 of 16

NXP Semiconductors

PSMN1R7-30YL

N-channel 30 V 1.7 m

Ω logic level MOSFET in LFPAK

Fig 8.

Forward transconductance as a function of

drain current; typical values

Fig 9.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Fig 10. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values

Fig 11. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aac452

0

50

100

150

200

0

20

406080

(S)

003aac453

0

20

40

60

80

012

34

(A)

°C

25

°C

003aac455

0

2000

4000

6000

8000

24

68

10

C

(pF)

003aac451

1.0

1.5

2.0

2.5

3.0

246

8

10

(m

Ω)