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BCX51 Datasheet(PDF) 10 Page - NXP Semiconductors |
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BCX51 Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 15 page BC636_BCP51_BCX51_8 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 08 — 22 February 2008 10 of 15 NXP Semiconductors BC636; BCP51; BCX51 45 V, 1 A PNP medium power transistors VCE = −2V (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 10. DC current gain as a function of collector current; typical values Fig 11. Collector current as a function of collector-emitter voltage; typical values VCE = −2V (1) Tamb = −55 °C (2) Tamb =25 °C (3) Tamb = 150 °C IC/IB =10 (1) Tamb = 150 °C (2) Tamb =25 °C (3) Tamb = −55 °C Fig 12. Base-emitter voltage as a function of collector current; typical values Fig 13. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa226 100 200 300 hFE 0 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) VCE (V) 0 −2.0 −1.6 −0.8 −1.2 −0.4 006aaa230 −0.8 −0.4 −1.2 −1.6 IC (A) 0 −4.5 −9 −13.5 −18 −22.5 −27 −31.5 IB (mA) = −45 −40.5 −36 006aaa227 −600 −800 −400 −1000 −1200 VBE (mV) −200 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) 006aaa228 −102 −103 VCEsat (mV) −10 IC (mA) −10−1 −104 −103 −1 −102 −10 (1) (2) (3) |
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