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BAS116 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BAS116 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 8 page 2003 Dec 12 2 NXP Semiconductors Product data sheet Low-leakage diode BAS116 FEATURES • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 µs • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. APPLICATION • Low leakage current applications in surface mounted circuits. DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a small SOT23 plastic SMD package. PINNING PIN DESCRIPTION 1 anode 2 not connected 3 cathode lumns 21 3 Top view MAM106 2 n.c. 1 3 Fig.1 Simplified outline (SOT23) and symbol. Marking code: JVp = made in Hong Kong; JVt = made in Malaysia; JVW = Made in China. ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Device mounted on an FR4 printed-circuit board. TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BAS116 − plastic surface mounted package; 3 leads SOT23 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage − 85 V VR continuous reverse voltage − 75 V IF continuous forward current see Fig.2; note 1 − 215 mA IFRM repetitive peak forward current − 500 mA IFSM non-repetitive peak forward current square wave; Tj = 25 °C prior to surge; see Fig.4 tp = 1 µs − 4 A tp = 1 ms − 1 A tp = 1 s − 0.5 A Ptot total power dissipation Tamb = 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C |
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