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ADC1412D080 Datasheet(PDF) 8 Page - NXP Semiconductors |
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ADC1412D080 Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 37 page ADC1412D065_080_105_125_2 © NXP B.V. 2009. All rights reserved. Objective data sheet Rev. 02 — 4 June 2009 8 of 37 NXP Semiconductors ADC1412D065/080/105/125 Dual 14-bit ADC 65, 80, 105 or 125 Msps 7. Limiting values 8. Thermal characteristics [1] In compliance with JEDEC test board, in free air. 9. Static characteristics Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDDA analog supply voltage <tbd> <tbd> V VDDO output supply voltage <tbd> <tbd> V ∆VCC supply voltage difference VDDA − VDDO <tbd> <tbd> V Tstg storage temperature −55 +125 °C Tamb ambient temperature −40 +85 °C Tj junction temperature - <tbd> °C Table 5. Thermal characteristics Symbol Parameter Conditions Typ Unit Rth(j-a) thermal resistance from junction to ambient [1] <tbd> K/W Rth(j-c) thermal resistance from junction to case [1] <tbd> K/W Table 6. Static characteristics Typical values measured at VDDA =3V, VDDO = 1.8 V, Tamb =25 °C and CL = 5 pF; min and max values are across the full temperature range Tamb = −40 °C to +85 °CatVDDA =3V, VDDO = 1.8 V; VINAP − VINAM = −1 dBFS; VINBP − VINBM = −1 dBFS; internal reference mode; applied to CMOS and LVDS interface; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Supplies VDDA analog supply voltage 2.85 3.0 3.4 V VDDO output supply voltage CMOS mode 1.65 1.8 3.6 V LVDS DDR mode 2.85 3.0 3.6 V IDDA analog supply current fclk = 125 Msps; fi =70 MHz - 370 - mA IDDO output supply current CMOS mode; fclk = 125 Msps; fi =70 MHz -40 - mA LVDS DDR mode: fclk = 125 Msps; fi =70 MHz -90 - mA P power dissipation ADC1412D125 - 1100 - mW ADC1412D105 - 975 - mW ADC1412D080 - 775 - mW ADC1412D065 - 670 - mW Power-down mode - <tbd> - mW Sleep mode - <tbd> - mW |
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