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74LVC1G175 Datasheet(PDF) 8 Page - NXP Semiconductors

Part No. 74LVC1G175
Description  Single D-type flip-flop with reset; positive-edge trigger
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Maker  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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74LVC1G175 Datasheet(HTML) 8 Page - NXP Semiconductors

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74LVC1G175_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 21 May 2007
8 of 17
NXP Semiconductors
74LVC1G175
Single D-type flip-flop with reset; positive-edge trigger
[1]
Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively.
[2]
tpd is the same as tPLH and tPHL.
[3]
CPD is used to determine the dynamic power dissipation (PD in µW).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = number of inputs switching;
Σ(C
L × VCC
2
× f
o) = sum of the outputs.
th
hold time
D to CP; see Figure 7
VCC = 1.65 V to 1.95 V
0.0
-
-
0.0
-
ns
VCC = 2.3 V to 2.7 V
0.3
-
-
0.3
-
ns
VCC = 2.7 V
0.5
-
-
0.5
-
ns
VCC = 3.0 V to 3.6 V
1.2
0.2
-
1.2
-
ns
VCC = 4.5 V to 5.5 V
0.5
-
-
0.5
-
ns
fmax
maximum
frequency
CP; see Figure 7
VCC = 1.65 V to 1.95 V
80
125
-
80
-
MHz
VCC = 2.3 V to 2.7 V
175
-
-
175
-
MHz
VCC = 2.7 V
175
-
-
175
-
MHz
VCC = 3.0 V to 3.6 V
175
300
-
175
-
MHz
VCC = 4.5 V to 5.5 V
200
-
-
200
-
MHz
CPD
power dissipation
capacitance
VI = GND to VCC; VCC = 3.3 V
[3]
-14-
-
-
pF
Table 8.
Dynamic characteristics …continued
Voltages are referenced to GND (ground = 0 V); for test circuit see Figure 9.
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max


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