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74HC4052DB Datasheet(PDF) 9 Page - NXP Semiconductors

Part No. 74HC4052DB
Description  Dual 4-channel analog multiplexer/demultiplexer
Download  27 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

74HC4052DB Datasheet(HTML) 9 Page - NXP Semiconductors

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74HC_HCT4052_6
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 06 — 11 January 2010
9 of 27
NXP Semiconductors
74HC4052; 74HCT4052
Dual 4-channel analog multiplexer/demultiplexer
Table 7.
Static characteristics for 74HC4052
Voltages are referenced to GND (ground = 0 V).
Vis is the input voltage at pins nYn or nZ, whichever is assigned as an input.
Vos is the output voltage at pins nZ or nYn, whichever is assigned as an output.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tamb = −40 °C to +85 °C[1]
VIH
HIGH-level input
voltage
VCC = 2.0 V
1.5
1.2
-
V
VCC = 4.5 V
3.15
2.4
-
V
VCC = 6.0 V
4.2
3.2
-
V
VCC = 9.0 V
6.3
4.7
-
V
VIL
LOW-level input
voltage
VCC = 2.0 V
-
0.8
0.5
V
VCC = 4.5 V
-
2.1
1.35
V
VCC = 6.0 V
-
2.8
1.8
V
VCC = 9.0 V
-
4.3
2.7
V
II
input leakage current
VEE = 0 V; VI = VCC or GND
VCC = 6.0 V
-
-
±1.0
μA
VCC = 10.0 V
-
-
±2.0
μA
IS(OFF)
OFF-state leakage
current
VCC = 10.0 V; VEE = 0 V; VI = VIH or VIL;
|V
SW| = VCC − VEE; see Figure 11
per channel
-
-
±1.0
μA
all channels
-
-
±2.0
μA
IS(ON)
ON-state leakage
current
VI = VIH or VIL; |VSW| = VCC − VEE;
VCC = 10.0 V; VEE = 0 V; see Figure 12
-
-
±2.0
μA
ICC
supply current
VEE = 0 V; VI = VCC or GND; Vis = VEE or VCC;
Vos = VCC or VEE
VCC = 6.0 V
-
-
80.0
μA
VCC = 10.0 V
-
-
160.0
μA
CI
input capacitance
-
3.5
-
pF
Csw
switch capacitance
independent pins nYn
-
5
-
pF
common pins nZ
-
12
-
pF
Tamb = −40 °C to +125 °C
VIH
HIGH-level input
voltage
VCC = 2.0 V
1.5
-
-
V
VCC = 4.5 V
3.15
-
-
V
VCC = 6.0 V
4.2
-
-
V
VCC = 9.0 V
6.3
-
-
V
VIL
LOW-level input
voltage
VCC = 2.0 V
-
-
0.5
V
VCC = 4.5 V
-
-
1.35
V
VCC = 6.0 V
-
-
1.8
V
VCC = 9.0 V
-
-
2.7
V
II
input leakage current
VEE = 0 V; VI = VCC or GND
VCC = 6.0 V
-
-
±1.0
μA
VCC = 10.0 V
-
-
±2.0
μA


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